Next-gen EEPROM wear levelling for embedded reliability excellence

This comprehensive study delves into the intricacies of EEPROM (Electrically Erasable Programmable Read-Only Memory) and presents innovative solutions to enhance its endurance.
Next-gen EEPROM wear levelling for embedded reliability excellence

EEPROM is a non-volatile memory used in embedded systems for persistent data storage, but its lifespan is limited by the number of write/erase cycles. Frequent writes to fixed memory locations quickly wear out the EEPROM, risking failure and higher maintenance costs.

To extend EEPROM life, dynamic memory addressing can be used — data records are saved to different locations, distributing wear. EEPROM typically supports 1,000,000 to 10,000,000 cycles, but fixed address writes can quickly exhaust this limit.

With dynamic addressing, records are saved sequentially and firmware scans memory to find valid data after a reset. Wear leveling is implemented by reading pages, erasing the next one before writing and rolling over to the first page as needed.

This technique prolongs EEPROM endurance by balancing writes but does not increase its inherent cycle limit. Minimizing write cycles is ideal, though often impractical for regular data saving.

Our latest whitepaper provides guidance for technology professionals and embedded systems engineers on increasing the reliability and lifespan of EEPROM-based systems. The techniques presented may help reduce maintenance costs and enhance embedded product performance.

For more information about optimizing EEPROM endurance and wear levelling, download the whitepaper.

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